Ding, Su-Ying; Yu, Si-Qi; Wang, Xiao-Xia; Wu, Zi-Hua; Li, Wen-Qin; Jia, Wei; Xie, Hua-Qing published the artcile< Fabrication of buffer-window layer system for Cu(ln, Ga)Se2 thin film devices by chemical bath deposition and Sol-Gel methods>, HPLC of Formula: 22519-64-8, the main research area is fabrication buffer window layer system copper indium gallium selenium; thin film device chem bath deposition Soluble gel method.
Recently, nontoxic fabrication for Cu(ln, Ga)Se2 thin films gained increasing popularity. In this work, chem. bath deposition and Sol-gel methods were utilized in the fabrication of an environmentally buffer-window (ZnS-ZnO/ZnO:AI) layer system for Cu(ln, Ga)Se2 thin film devices. The influences of conditions like annealing temperature, coating times, and Al-doping amount were investigated. The surface morphol. and optical properties illustrated a compact and uniform ZnS film with a band-gap of 3.78, which can be a good alternative to CdS film. Resistivity of 0.35 ω.cm for the ZnO/ZnO:AI film was achieved by the ideal condition of 9 coating times and 5 Al-doping amounts A cross-sectional view of the complete Cu(ln, Ga)Se2 thin film was obtained, and the structure status was analyzed.
Journal of Nanoelectronics and Optoelectronics published new progress about Absorbents. 22519-64-8 belongs to class chlorides-buliding-blocks, and the molecular formula is Cl3H8InO4, HPLC of Formula: 22519-64-8.
Referemce:
Chloride – Wikipedia,
Chlorides – an overview | ScienceDirect Topics